c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . K2611B product description winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics wt-f0 55 -rev.a 1 jan .201 4 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 11a,900v, r ds(on) (max1.10 ? )@v gs =10v ? ultra-low gate charge(typical 66nc) ? fast switching capability ? 100%avalanche tested ? improved dv/dt capability ? rohs product general description this n-channel enhancement mode power field effect transistors are produced using winsemi's proprietary, planar stripe ,dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies. absolute maximum ratings symbol parameter value units v dss drain source voltage 900 v i d continuous drain current(@tc=25 ) 11 a continuous drain current(@tc=100 ) 6.9* a i dm drain current pulsed (note1) 44 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 970 mj i ar avalanche current (note1) 11 a e ar repetitive avalanche energy (note1) 30.1 mj dv/dt peak diode recovery dv /dt (note3) 4.1 v/ ns p d total power dissipation(@tc=25 ) 277 w derating factor above 25 2.22 w/ t j junction temperature 150 t stg storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.45 /w r qja thermal resistance , junction-to -ambient - - 40 /w g d s
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 2 / 8 K2611B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 10 0 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 900 v,v gs =0v - - 1 a v ds = 720 v, tc=125 10 a drain -source breakdown voltage v (br)dss i d = 250 a,v gs =0v 900 - - v gate threshold voltage v gs(th) v ds = v gs ,i d = 250 a 3.0 - 5.0 v drain -source on resistance r ds(on) v gs =10v,i d = 5.5 a - 0.90 1.10 ? forward transconductance gfs v ds = 40 v,i d = 5.5 a - 9.5 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 2550 3340 pf reverse transfer capacitance c rss - 22 30 output capacitance c oss - 210 270 switching time turn-on rise time tr v dd = 450 v, i d = 11 a r g = 25 ? (note4,5) - 130 280 ns turn-on delay time td( on ) - 54 122 turn-on fall time tf - 80 181 turn-off delay time td( off ) - 125 304 total gate charge(gate-source plus gate-drain) qg v dd = 720 v, v gs =10v, i d = 11 a (note 4 ,5) - 66 80 nc gate-source charge qgs - 13 - gate-drain("miller") charge qgd - 35 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 11 a pulse drain reverse current i drp - - - 44 a forward voltage(diode) v dsf i dr = 11 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 11 a,v gs =0v, di dr / dt =100 a / s - 999 - ns reverse recovery charge qrr - 16.9 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 15m h i as = 11 a,v dd = 50 v,r g = 25 ? ,starting t j =25 3.i sd 11 a,di/dt 2 00a/us,v dd < bv dss ,s tarting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 3 / 8 K2611B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet fig.1 on region characteristics fig.2 transfer characteristics fig.3 on-resistance variation vs drain current and gate voltage fig.4 body diode forward voltage variation with source current and temperature fig.5 capacitance characteristics fig.6 gate charge characteristics v g s t o p 1 5 v 1 0 v 9 v 8 v 7 v 6 . 5 v 6 v 5 . 5 v 5 v b o tto m notes: 1.250us pulse test 2.tc=25 c 1 0 1 1 1 0 v v d s [ ] i a d [ ] 150 c 2 5 c notes: 1.250us pulse test 2.v =40v d s v [v] g s i [ a ] d 0 . 1 2 4 6 8 1 0 1 1 0 v =10v g s v =20v g s n ote:t = 25 c j 0 2 4 5 6 1 0 1 2 1 4 1 6 1 8 2 0 0 . 8 1 . 0 1 . 2 1 . 4 i [a] d r ( o n ) [ ] d s ? 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . 1 1 . 2 1 . 3 1 . 4 1 . 5 0 . 1 1 1 0 150 c 2 5 c notes: 1.250us pulse test 2.v =0v g s v [v] s d i [ a ] d r 4 5 0 0 4 0 0 0 3 5 0 0 3 0 0 0 2 5 0 0 2 0 0 0 1 5 0 0 1 0 0 0 5 0 0 0 1 0 - 1 1 0 0 1 0 1 v drain-source voltage[v] d s c a p a c i t a n c e [ p f ] c i s s c o s s c r s s ciss=cgs+cgd(cds=shorted) coss=cds+cgd crss=cgd 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 0 2 4 6 8 1 0 1 2 q toltal gate charge[nc] g v g a t e s o u r c e v o l t a g e [ v ] g s v =720v d s v =450v d s v =180v d s *note:i =11a d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 4 / 8 K2611B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet fig.9 maximum safe operation area fig.10 maximum drain current vs case temperature fig.11 transient thermal response curve fig.7 breakdown voltage variation vs.temperature fig.8 on-resistance variation vs.temperature - 7 5 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 . 8 0 . 9 1 . 0 1 . 1 1 . 2 t [ c ] j b v ( n o r m a l i z e d ) d s notes: 1.v =0v 2.i =250ua g s d - 7 5 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 notes: 1.v =10v 2.i =5.5a g s d 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 t [ c ] j r ( o n ) ( n o r m a l i z e d ) d s 1 0 s 1 0 0 s 1 m s 1 0 m s 1 0 0 m s d c operation on this area is limited by r ds (o n) note: 1.t =25 c 2.t =150 c 3.single pulse c c v drain-sourcevoltage[v] d s i d r a i n c u r r e n t [ a ] d 1 0 0 1 0 2 1 0 1 1 0 3 1 0 - 1 1 0 0 1 0 1 1 0 2 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 2 4 6 8 1 0 1 2 t case temperature[ c ] c i d r a i n c u r r e n t [ a ] d d 0 5 = . 0 2 . 0 1 . 0 05 . 0 02 . 0 01 . single pulse 1.z (t)=0.45 c/w max. 2.duty factor,d=t1/t2 3.t -t =p * j c jm c dm z (t) j c *notes: 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 t square wave pulse duration[sec] 1 z ( t ) , t h e r m a l r e s p o n s e j c 1 0 . 1 0 . 0 1 p d m t 1 t 2
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 5 / 8 K2611B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet fig.12 gate test circuit & waveform fig.13 resistive switching test circuit & waveform fig.14 unclamped inductive switching test circuit & waveform 1 2 v 2 0 0 n f 3 m a 3 0 0 n f 5 0 k v g s d u t v g s v d s 1 0 v c h a rg e same type a s d u t q g s q g d q g 1 0 v r g v g s v d s r l v d s v g s d u t 9 0 % 1 0 % t d (o n ) t r t d (o ff) t o n t o f f t f v d d 1 0 v r g l i d v d d e a s = b v d s s b v d s s - v d d 1 2 l i a s 2 d u t b v d s s i a s i t d ( ) t i m e v d s ( ) t t p t p v d s v d d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 6 / 8 K2611B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet fig.15 peak diode recovery dv/dt test circuit & waveform v d s d u t i s d l driver s am e type a s d u t r g v g s v d d dv/dt controlled by r g i conteolled by pulse period s d v g s (driver) d = gate pulse width gate pulse period 1 0 v i s d i ,body diode forward current f m (dut) v d s i s d (dut) i r m di/dt body diode reverse current body diode recovery dv/dt v d d body diode forward voltage drop v s d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 7 / 8 K2611B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet to- 3pb package dimension e symbol m i n m a x a 4 60 . 5 00 . b 2 90 . 3 20 . b 1 1 90 . 2 20 . b 0 90 . 1 10 . c 0 50 . 0 70 . d 19 40 . 20 40 . e 15 40 . 15 80 . e 5 45 typ . ) f 1 40 . 1 60 . l 19 50 . 20 50 . l 2 3 30 . 3 70 . q 4 90 . 5 10 . q 1 1 . 3 0 1 50 . p 3 10 . 3 50 . a f p q d l 2 b 1 b l e b c q 1 u n it : m m
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 8 / 8 K2611B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet note: note: note: note: 1. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2. please do not exceed the absolute maximum ratings of the device when circuit designing. 3. winsemi microelectronics co., ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. contact: contact: contact: contact: winsemi microelectronics co., ltd. add:futian district, shenzhen tian an cyber tech plaza two east wing 1002 post code : 518040 tel : +86-755-8250 6288 fax : +86-755-8250 6299 web site : www.winsemi.com
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